power transistors 1 publication date: march 2004 sjd00314aed 2sC5931 silicon npn triple diffusion mesa type horizontal deflection output for tv, crt monitor features ? high breakdown voltage: v cbo 1 700 v ? high speed switching: t f < 200 ns ? wide safe operation area absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 1 000 v, i e = 050 a v cb = 1 700 v, i e = 01ma emitter-base cutoff current (collector open) i ebo v eb = 7 v, i c = 050 a forward current transfer ratio h fe v ce = 5 v, i c = 7.5 a 5 10 ? collector-emitter saturation voltage v ce(sat) i c = 7.5 a, i b = 1.88 a 3 v base-emitter saturation voltage v be(sat) i c = 7.5 a, i b = 1.88 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.1 a, f = 0.5 mhz 3 mhz storage time t stg i c = 7.5 a, resistance loaded 2.7 s fall time t f i b1 = 1.88 a, i b2 = ? 3.75 a 0.2 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 1 700 v collector-emitter voltage (e-b short) v ces 1 700 v collector-emitter voltage (base open) v ceo 600 v emitter-base voltage (collector open) v ebo 7v base current i b 7.5 a collector current i c 15 a peak collector current * i cp 25 a collector power dissipation p c 60 w t a = 25 c3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 15.5 0.5 3.0 0.3 (4.0) 2.0 0.2 1.1 0.1 5.45 0.3 0.7 0.1 5? 5? 5? 5? 5? 10.9 0.5 1 5? 23 (10.0) (1.2) (2.0) solder dip 3.3 0.3 5.5 0.3 (2.0) 26.5 0.5 (23.4) 22.0 0.5 18.6 0.5 (2.0) 3.2 0.1 (4.5) 1: base 2: collector 3: emitter eiaj: sc-94 top-3e-a1 package note) * : non-repetitive peak collector current internal connection b c e marking symbol: C5931
2sC5931 2 sjd00314aed p c ? t a safe operation area safe operation area (horizontal operation) 100 60 40 20 10 30 50 80 70 90 0 050 25 75 125 100 150 ambient temperature t a ( c ) collector power dissipation p c ( w ) (1) (3) (2) (1) t c = t a (2) with a 100 100 2 mm al heat sink (3) without heat sink collector current i c ( a ) collector-emitter voltage v ce ( v ) 10 ? 1 10 ? 2 10 ? 3 10 1 100 1 10 100 1 000 i cp i c d c t = 100 s non repetitive pulse, t c = 25 c t = 1 ms t = 10 ms 35 25 30 20 10 15 5 0 01 000 500 1 500 2 000 collector current i c ( a ) collector-emitter voltage v ce ( v ) < 1 ma fh = 64 khz, t c < 90 c a.s.o for a single pulse load caused by eht flash over during horizontal operation.
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep
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